MJD117-1G
Manufacturer:
On Semiconductor
Mfr.Part #:
MJD117-1G
Datasheet:
Description:
BJTs TO-251-4 Through Hole PNP 20 W Collector Base Voltage (VCBO):100 V Collector Emitter Voltage (VCEO):100 V Emitter Base Voltage (VEBO):5 V
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | -100 V |
| Length | 6.73 mm |
| Width | 2.38 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -65 °C |
| Number of Pins | 4 |
| Height | 6.22 mm |
| Packaging | Tube |
| Halogen Free | Halogen Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| Polarity | PNP - Darlington |
| Number of Elements | 1 |
| Current Rating | -2 A |
| Lifecycle Status | Production (Last Updated: 2 months ago) |
| Max Power Dissipation | 1.75 W |
| Power Dissipation | 20 W |
| Max Collector Current | 2 A |
| Collector Emitter Breakdown Voltage | 100 V |
| Transition Frequency | 25 MHz |
| Continuous Collector Current | 2 A |
| Element Configuration | Single |
| Collector Emitter Voltage (VCEO) | 100 V |
| Collector Base Voltage (VCBO) | 100 V |
| Collector Emitter Saturation Voltage | 2 V |
| Emitter Base Voltage (VEBO) | 5 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 months ago) |
| Max Cutoff Collector Current | 2 A |
| Transistor Type | PNP |
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